BUK9540 Просмотр технического описания (PDF) - Philips Electronics

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BUK9540

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

BUK95/9640-100A

TrenchMOS™ logic level FET

80

ID

(A)

03na61

60

40

20

0

0

Tj = 175 ºC

1

2

Tj = 25 ºC

3

4

VGS (V)

5

VGS

(V)

4

3

VDD = 14 (V)

2

1

0

0

20

03na63

VDD = 80 (V)

40

60

QG (nC)

VDS = 25 V

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj = 25 °C; ID = 25 A

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

100

03na62

IS

(A)

80

60

40

Tj = 175 ºC

20

Tj = 25 ºC

0

0.0

0.5

1.0

1.5

2.0

VSD (V)

VGS = 0 V

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

9397 750 09162

Product data

Rev. 03 — 08 February 2002

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

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