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BUK9540

TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

BUK95/9640-100A

TrenchMOS™ logic level FET

Table 5: Characteristics…continued

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Source-drain diode

VSD

source-drain (diode forward) IS = 25 A; VGS = 0 V;

-

voltage

Figure 15

trr

reverse recovery time

IS = 37 A; dIS/dt = −100 A/µs

-

Qr

recovered charge

VGS = −10 V; VDS = 30 V

-

Typ

Max

Unit

0.85

1.2

V

60

-

ns

240

-

nC

120

ID

(A)

100

80

60

40

20

5.0

4.0

VGS = 10 (V)

03na66

3.0

2.4

34

RDSon

(mΩ)

32

30

28

26

03na64

0

0

2

4

6

8

10

VDS (V)

24

0

5

10

15

VGS (V)

Tj = 25 °C; tp = 300 µs

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Tj = 25 °C; ID = 25 A

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

50

RDSon

(mΩ)

45

40

35

30

03na67

VGS = 3.0 (V)

3.2

3.4

3.6

4.0

5.0

10

25

20

10

20

30

40

50

60

70

ID (A)

2.8

a 2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-60

-20

20

03ng41

60 100 140 180

Tj (ºC)

Tj = 25 °C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

a = -R---D----RS---oD---n-S-(--o2--5-n--°--C---)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 09162

Product data

Rev. 03 — 08 February 2002

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

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