BUK9540 Просмотр технического описания (PDF) - Philips Electronics
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BUK9540 Datasheet PDF : 14 Pages
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Philips Semiconductors
BUK95/9640-100A
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
03aa33
typ
min
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5
10-5
0
-60
0
60
120
180
Tj ( C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
1
2
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
80
03na65
gfs
(S)
60
40
20
0
0
10
20
30 ID (A) 40
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
6000
C
(pF)
5000
4000
3000
2000
Ciss
Coss
Crss
03na68
1000
0
10-2
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 09162
Product data
Rev. 03 — 08 February 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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