BUK9540 Просмотр технического описания (PDF) - Philips Electronics
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BUK9540 Datasheet PDF : 14 Pages
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Philips Semiconductors
BUK95/9640-100A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 5 V; ID = 25 A
Tj = 25 °C; VGS = 4.5 V; ID = 25 A
Tj = 25 °C; VGS = 10 V; ID = 25 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM
drain current (peak value)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR
reverse drain current
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S non-repetitive avalanche energy
unclamped inductive load; ID = 39 A;
VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
Typ
Max Unit
-
100
V
-
39
A
-
158
W
-
175
°C
34
40
mΩ
-
43
mΩ
29
39
mΩ
Min
Max Unit
-
100
V
-
100
V
-
±15
V
-
39
A
-
28
A
-
159
A
-
158
W
−55
+175 °C
−55
+175 °C
-
39
A
-
159
A
-
182
mJ
9397 750 09162
Product data
Rev. 03 — 08 February 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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