GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared toother comparable 5-volt flash memory products). 

FEATURES
Single 5-volt program and erase operations  
Fast page-write operations 
  −128 bytes per page
  −Page program cycle: 10 mS (max.)
  −Effective byte-program cycle time: 39 µS
  −Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
  −Active current: 25 mA (typ.)
  −Standby current: 20 µA (typ.)
Automatic program timing with internal VPPgeneration
End of program detection
  −Toggle bit
  −Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 32-pin TSOP (8 x 20 mm), 32-pin STSOP 
(8 x 14 mm), 32-pin PLCC, and Lead-free 32-pin PLCC