GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of theW29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES
·  Single 5-volt program and erase operations
·  Fast page-write operations
   - 128 bytes per page
   - Page program cycle: 10 mS (max.)
   - Effective byte-program cycle time: 39 mS
   - Optional software-protected data write
·  Fast chip-erase operation: 50 mS
·  Read access time: 90/150 nS
·  Page program/erase cycles: 1K/10K
·  Ten-year data retention
·  Software and hardware data protection
·  Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·  Automatic program timing with internal VPP generation
·  End of program detection
  - Toggle bit
  - Data polling
·  Latched address and data
·  TTL compatible I/O
·  JEDEC standard byte-wide pinouts
·  Available packages: 32-pin 600 mil DIP, TSOP, and PLCC