W21NM60N(2005) Даташит - STMicroelectronics
Номер в каталоге
W21NM60N
Компоненты Описание
Other PDF
PDF
page
16 Pages
File Size
670.1 kB
производитель
STMicroelectronics
DESCRIPTION
The STx21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
FEATUREs
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ II family is very suitable for
increasing power density of high voltage converters
allowing system miniaturization and higher efficiencies.
Номер в каталоге
Компоненты Описание
PDF
производитель
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
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N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
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