Номер в каталоге
STP20NM60
производитель
STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General Features
■ TYPICAL RDS(on) = 0.25 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Номер в каталоге
Компоненты Описание
PDF
производитель
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel D-PAK/TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-channel 600V - 0.26Ω- 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode)
STMicroelectronics
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
