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VND5N07(2008) Даташит - STMicroelectronics

VND5N07 image

Номер в каталоге
VND5N07

Компоненты Описание

Other PDF
  2004   lastest PDF  

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page
24 Pages

File Size
452.9 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.


FEATUREs
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ Esd protection
■ Direct access to the gate of the power mosfet
   (analog driving)
■ Compatible with standard Power MOSFET

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Номер в каталоге
Компоненты Описание
PDF
производитель
OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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OMNIFET II fully autoprotected Power MOSFET
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2013 )
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2004 )
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2003 )
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics

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