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VND5N07-E Даташит - STMicroelectronics

VND5N07-E image

Номер в каталоге
VND5N07-E

Компоненты Описание

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page
22 Pages

File Size
325.4 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.


FEATUREs
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power mosfet
   (analog driving) 
• Compatible with standard Power MOSFET

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Номер в каталоге
Компоненты Описание
PDF
производитель
OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2013 )
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2004 )
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET ( Rev : 2008 )
STMicroelectronics
OMNIFET II fully autoprotected Power MOSFET
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2003 )
STMicroelectronics
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics

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