PRODUCT DESCRIPTION
The UT28F64LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64LV. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64LV ideal for high speed systems designed for operation in radiation environments.

FEATURES
❐ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory
   - Supported by industry standard programmer
❐ 55ns maximum address access time (-55 °C to +125 °C)
❐ Three-state data bus
❐ Low operating and standby current
   - Operating: 50mA maximum @18.2 MHz
      • Derating: 1.5mA/MHz
   - Standby: 500mA maximum (post-rad)
❐ Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
   - Total dose: 1E6 rad(Si)
   - LETTH(0.25) ~ 100 MeV-cm2/mg
   - SEL Immune >128 MeV-cm2/mg
      - Saturated Cross Section cm2 per bit, 1.0E-11
         - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
   - Memory cell LET threshold: >128 MeV-cm2/mg
❐ QML Q & V compliant part
   - AC and DC testing at factory
❐ Packaging options:
   - 28-pin 100-mil center DIP (0.600 x 1.4)
   - 28-lead 50-mil center flatpack (0.490 x 0.74)
❐ VDD: 3.0 to 3.6volts
❐ Standard Microcircuit Drawing 5962-01516