PRODUCT DESCRIPTION
The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64 ideal for high speed
systems designed for operation in radiation environments.

EATURES
Programmable, read-only, asynchronous, radiation hardened, 8K x 8 memory
- Supported by industry standard programmer
35ns and 45ns maximum address access time (-55^oC to +125^oC)
TTL compatible input and TTL/CMOS compatible output levels
Three-state data bus
Low operating and standby current
- Operating: 100mA maximum @28.6MHz
  · Derating: 3mA/MHz
- Standby: 500mA maximum (post-rad)
Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
- Total dose: 1E6 rad(Si)
-  LET_TH (0.25) ~ 100 MeV-cm²/mg
-  SEL Immune  >128 MeV-cm²/mg
- Saturated Cross Section cm² per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
- Memory cell LET threshold: >128 MeV-cm²/mg
QML Q & V compliant part
- AC and DC testing at factory
Packaging options:
- 28-pin 100-mil center DIP (0.600 x 1.4)
- 28-lead 50-mil center flatpack (0.490 x 0.74)
VDD: 5.0 volts +  10%
Standard Microcircuit Drawing 5962-96873