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TK8A500 Даташит - Toshiba

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TK8A500

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)

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Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Компоненты Описание

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производитель

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