TK8A500 Просмотр технического описания (PDF) - Toshiba
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TK8A500 Datasheet PDF : 7 Pages
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TK8A50D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯
⎯
±1
μA
IDSS
VDS = 500 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
500 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 4 A
⎯
0.7 0.85
Ω
⎪Yfs⎪
VDS = 10 V, ID = 4 A
1.0 4.0
⎯
S
Ciss
⎯ 800 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
4
⎯
pF
Coss
⎯ 100 ⎯
tr
10 V
VGS
ID = 4 A VOUT
⎯
20
⎯
0V
ton
50 Ω
RL =
50 Ω
⎯
40
⎯
ns
tf
⎯
12
⎯
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
60
⎯
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
Qgd
⎯
16
⎯
⎯
10
⎯
nC
⎯
6
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
www.DataSheet.net/
Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
⎯
⎯
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
8
A
⎯
⎯
32
A
⎯
⎯
−1.7
V
⎯ 1200 ⎯
ns
⎯
10
⎯
μC
Marking
K8A50D
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
2
2008-09-16
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