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TK4P60DA Даташит - Toshiba

TK4P60DA image

Номер в каталоге
TK4P60DA

Компоненты Описание

Other PDF
  2010  

PDF
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page
10 Pages

File Size
272.6 kB

производитель
Toshiba
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Features
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V)
(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)


APPLICATIONs
• Switching Voltage Regulators


Номер в каталоге
Компоненты Описание
PDF
производитель
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba

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