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TK3P50D(2011) Даташит - Toshiba

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TK3P50D

Компоненты Описание

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9 Pages

File Size
229.4 kB

производитель
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Features
(1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 1.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)


APPLICATIONs
• Switching Voltage Regulators


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