Toshiba TIM1414-4A Даташит, TIM1414-4A PDF, даташитов

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TIM1414-4A Даташит - Toshiba

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TIM1414-4A

Компоненты Описание

Internally Matched Power GaAs FETs (X, Ku-Band)

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Toshiba

Features
• High power
- P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz
• High gain
- G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
• Broad Band Internally Matched
• Hermetically sealed package

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Компоненты Описание

PDF

производитель

MGFX39V0717

X/Ku band internally matched power GaAs FET ( Rev : 2011 )

View

MITSUBISHI ELECTRIC

MGFK39V4045

X/Ku band internally matched power GaAs FET ( Rev : 2011 )

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MITSUBISHI ELECTRIC

MGFK33V4045

X/Ku band internally matched power GaAs FET ( Rev : 2011 )

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MITSUBISHI ELECTRIC

MGFK25V4045

X/Ku band internally matched power GaAs FET

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MITSUBISHI ELECTRIC

MGFK35V4045

X/Ku band internally matched power GaAs FET

View

MITSUBISHI ELECTRIC

MGFK30V4045

X/Ku band internally matched power GaAs FET ( Rev : 2011 )

View

MITSUBISHI ELECTRIC

MGFK38A3745

X/Ku band internally matched power GaAs FET

View

MITSUBISHI ELECTRIC

FLM1011-6F

X, Ku-Band Internally Matched FET

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Eudyna Devices Inc

FLM8596-8F

X, Ku-Band Internally Matched FET

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Eudyna Devices Inc

FLM1011-20F

X,Ku-Band Internally Matched FET

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Eudyna Devices Inc

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