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MGFK39V4045(2011) Даташит - MITSUBISHI ELECTRIC

MGFK39V4045 image

Номер в каталоге
MGFK39V4045

Компоненты Описание

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2 Pages

File Size
93.2 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
   Internally matched to 50(ohm) system
   Flip-chip mounted
   ● High output power
      P1dB=8W (TYP.) @f=14.0 – 14.5GHz
   ● High linear power gain
      GLP=5.5dB (TYP.) @f=14.0 – 14.5GHz
   ● High power added efficiency
      P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz


APPLICATION
● 14.0 – 14.5 GHz band power amplifiers

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Номер в каталоге
Компоненты Описание
PDF
производитель
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
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X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
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