FEATURES
■ HIGH POWER
   P1dB=42.0dBm at 13.75GHz to 14.5GHz
■ BROAD BAND INTERNALLY MATCHED FET
■ HIGH GAIN
   G1dB=6.0dB at 13.75GHz to 14.5GHz
■ HERMETICALLY SEALED PACKAGE
■ LOW INTERMODULATION DISTORTION
   IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level