FEATURES
■ LOW INTERMODULATION DISTORTION
    IM3=-45 dBc at Pout= 29.0dBm
■ HIGH POWER
    P1dB=40.5dBm at 10.7GHz to 11.7GHz
■ HIGH GAIN
    G1dB=6.0 dB at 10.7 GHz to 11.7GHz
■ BROAD BAND INTERNALLY MATCHED FET
■ HERMETICALLY SEALED PACKAGE