FEATURES
■ LOW INTERMODULATION DISTORTION
      IM3=-45 dBc at Pout= 29.0dBm
■ HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz
■ HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz
■ BROAD BAND INTERNALLY MATCHED FET
■ HERMETICALLY SEALED PACKAGE