NPN SiGe RF POWER TRANSISTOR

The THN5602F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package.
The THN5602F can be used as a driver device or an output device, depending on the specific application.

FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz

APPLICATIONS
o Hand-held radio equipment in common
   emitter class-AB operation in 450 MHz
   communication band.