DESCRIPTION
The THN5601SF is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-23F SMD package.
The THN5601SF can be used as a driver device or an output device, depending on the specific application.

□ FEATURES
o 4.8 Volt operation
o P1dB 26dBm @f=900MHz
o Power gain 9.0 dB @f=900MHz

□ APPLICATIONS
o Hand-help radio equipment in common
   emitter class-AB operation in 900MHz
   communication band.