TH58NVG5S0FTA20 Просмотр технического описания (PDF) - Toshiba

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TH58NVG5S0FTA20

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

TOSHIBA CONFIDENTIAL TH58NVG5S0FTA20

ABSOLUTE MAXIMUM RATINGS

SYMBOL

RATING

VALUE

UNIT

VCC

VIN

VI/O

PD

TSOLDER

TSTG

TOPR

Power Supply Voltage

Input Voltage

Input /Output Voltage

Power Dissipation

Soldering Temperature (10 s)

Storage Temperature

Operating Temperature

−0.6 to 4.6

V

−0.6 to 4.6

V

−0.6 to VCC + 0.3 (≤ 4.6 V)

V

0.3

W

260

°C

−55 to 150

°C

0 to 70

°C

CAPACITANCE *(Ta = 25°C, f = 1 MHz)

SYMB0L

PARAMETER

CONDITION

MIN

CIN

Input

VIN = 0 V

⎯

COUT

Output

VOUT = 0 V

⎯

* This parameter is periodically sampled and is not tested for every device.

MAX

40

40

UNIT

pF

pF

4

2010-12-13C

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