Key Features
• 0.25 um pHEMT Technology
• 17 dB Nominal Gain
• 31 dBm Pout @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
• Chip Dimensions 4.13 x 3.30 x 0.1 mm

Primary Applications
• Military Radar Systems
• Ka Band Sat-Com
• Point-to-Point Radio