DESCRIPTION
The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

FEATURES
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
• Thickness through insulation ≥ 0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• switch-mode power supplies
• line receiver
• computer peripheral interface
• microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
    - for appl. class I - IV at mains voltage ≤ 300 V
    - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5.