DESCRIPTION
The TCDT1100/TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. The elements are mounted on one leadframe which providing a fixed distance between input and output for highest safety requirements.

FEATURES
• Isolation test voltage 5300 VRMS
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• No base terminal connection for improved noise immunity
• CTR offered in 4 groups
• Thickness though insulation ≥0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥275
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC