TCDT1100 Просмотр технического описания (PDF) - Vishay Semiconductors
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TCDT1100 Datasheet PDF : 9 Pages
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TCDT1100/TCDT1100G
Vishay Semiconductors Optocoupler, Phototransistor Output
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IC/IF
VCE = 5 V, IF = 10 mA
PART SYMBOL
TCDT1100 CTR
TCDT1100G CTR
TCDT1101 CTR
TCDT1101G CTR
TCDT1102 CTR
TCDT1102G CTR
TCDT1103 CTR
TCDT1103G CTR
MIN.
40
40
63
100
TYP.
MAX.
80
125
200
UNIT
%
%
%
%
%
%
%
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
IF
130
mA
Power dissipation
COUPLER
Pdiss
265
mW
Rated impulse voltage
Safety temperature
VIOTM
Tsi
6
kV
150
°C
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, ttest = 1 s
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb = 100 °C
VIO = 500 V, Tamb = 150 °C
(construction test only)
SYMBOL
Vpd
VIOTM
Vpd
RIO
RIO
RIO
MIN.
1.6
6
1.3
1012
1011
109
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
300
250
Phototransistor
Psi (mW)
200
150
100
50
0
0
94 9182
IR-diode
Isi (mA)
25 50 75 100 125 150
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
VIOTM
VPd
VIOWM
VIORM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
www.vishay.com
778
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83535
Rev. 1.6, 16-May-08
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