GRNERAL DESCRIPTION
The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

FEATURES
• Fast access time from clock: 5/5.4 ns
• Fast clock rate: 166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• 2M word x 16-bit x 4-bank
• Programmable Mode registers
    - CAS# Latency: 2, or 3
    - Burst Length: 1, 2, 4, 8, or full page
    - Burst Type: interleaved or linear burst
    - Burst stop function
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• CKE power down mode
• Single +3.3V power supply
• Interface: LVTTL
• 54-pin 400 mil plastic TSOP II package
• Lead-free package is available