GENERAL DESCRIPTION
The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual banks operation
• MRS cycle with address key programs
    -. CAS Latency ( 2 & 3)
    -. Burst Length (1, 2, 4, 8 & full page)
    -. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 15.6us refresh duty cycle (2K/32ms)