DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark
able manufacturing reproducibility.

■ TYPICAL RDS(on)= 0.032Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100°C
■ APPLICATION ORIENTED CHARACTERIZATION