DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.06 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)