Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

FEATUREs
• Outstanding RDS(on)*area
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitance
• 100% avalanche tested

APPLICATIONs
• Switching applications