STI410N4F7AG Даташит - STMicroelectronics
Номер в каталоге
STI410N4F7AG
Компоненты Описание
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PDF
page
12 Pages
File Size
654.8 kB
производитель
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Designed for automotive applications
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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