STH13N120K5-2AG Даташит - STMicroelectronics
Номер в каталоге
STH13N120K5-2AG
Компоненты Описание
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page
15 Pages
File Size
550.4 kB
производитель
STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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