SM706 Даташит - Polyfet RF Devices
Номер в каталоге
SM706
Other PDF
no available.
PDF
page
2 Pages
File Size
46.5 kB
производитель
Polyfet RF Devices
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high F transistors with high input impedance and high efficiency.
Номер в каталоге
Компоненты Описание
PDF
производитель
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended
Polyfet RF Devices
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
Share Link: