General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high F transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

4.0 Watts Single Ended
Package Style SO8

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE