DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES
• Suitable for short and medium pulse applications up to 1 ms/10%
• Internal input prematching networks allow an easier design of circuits
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS
   Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.