DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.

FEATURES
• Self-aligned process entirely ion implanted and gold sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.

APPLICATIONS
    Common emitter class A linear power amplifiers up to 4 GHz.