Silicon N Channel IGBT High Speed Power Switching

FEATUREs
Low collector to emitter saturation voltage
    VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
  tf= 80 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)