RJH60F4DPK Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
Список матч
RJH60F4DPK Datasheet PDF : 8 Pages
| |||
RJH60F4DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
Gate to emitter leak current
IGES
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Switching time
td(on)
tr
td(off)
tf
C-E diode forward voltage
VECF1
VECF2
C-E diode reverse recovery time
trr
Notes: 3. Pulse test
Typ
1.4
1.7
1900
93
33
45
150
85
80
1.6
1.8
140
Preliminary
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 2 of 7
Share Link: 