RJH30H1DPP Даташит - Renesas Electronics
Номер в каталоге
RJH30H1DPP
Компоненты Описание
Other PDF
no available.
PDF
page
7 Pages
File Size
139.4 kB
производитель
Renesas Electronics
Features
● Trench gate and thin wafer technology (G6H-II series)
● High speed switching: tr =80 ns typ., tf = 150 ns typ.
● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
● Low leak current: ICES = 1 μA max.
● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
● Isolated package: TO-220FL
Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon N Channel IGBT High Speed Power Switching
( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching ( Rev : 2010 )
Renesas Electronics
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