RJH60F4DPQ-A0 Даташит - Renesas Electronics
Номер в каталоге
RJH60F4DPQ-A0
Компоненты Описание
Other PDF
no available.
PDF
page
8 Pages
File Size
92.6 kB
производитель
Renesas Electronics
Features
• Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching
tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)
Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon N Channel IGBT High Speed Power Switching
( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching ( Rev : 2010 )
Renesas Electronics
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