[GESS]

This RFM8N18L and RFM8N20L and the RFP8N18L and RFP8N20L are n-Channel enhancement-mode silicon-gate power field-effect transistor is specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

FEATUREs
■ Design optimized for 5 volt gate drives
■ Can be driven directly from QMOS, NMOS, TTL Circuits
■ Compatible with automotive drive requirements
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedence
■ Majority carrier device