RD16HHF1 Даташит - MITSUBISHI ELECTRIC
Номер в каталоге
RD16HHF1
Компоненты Описание
PDF
page
9 Pages
File Size
572 kB
производитель
MITSUBISHI ELECTRIC
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
Номер в каталоге
Компоненты Описание
PDF
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