RD00HHS1 Даташит - MITSUBISHI ELECTRIC
Номер в каталоге
RD00HHS1
Компоненты Описание
PDF
page
7 Pages
File Size
287.9 kB
производитель
MITSUBISHI ELECTRIC
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
Номер в каталоге
Компоненты Описание
PDF
производитель
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2008 )
MITSUBISHI ELECTRIC
Share Link: