Description
The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• Class AB Characteristics
• 26 Volt, 1.9 GHz Characterization
    - Output Power = 12 W(CW), 15 W(PEP)
• Internal Input Matching
• Gold Metallization
• Silicon Nitride Passivated