Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally matched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

• 10 Watts, 1.6–1.7 GHz
• Class A/AB Characteristics
• 38% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated