Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
FEATUREs
■ Low thermal resistance
■ SO8 equivalent area footprint
■ Low gate drive
■ Low on-state resistance.
APPLICATIONs
■ DC-to-DC converters
■ Switched-mode power supplies
■ Portable appliances
■ Notebook computers.