General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Saves PCB space due to small
   footprint
■ Simple gate drive required due to low
   gate charge
■ Suitable for logic level gate drive
   sources

APPLICATIONs
■ Computer motherboards
■ DC-to-DC convertors
■ Notebook computers
■ Switched-mode power supplies